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IXTT6N150
IXTH6N150
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
TO-268 Outline
g fs
C iss
C oss
C rss
t d(on)
V DS = 20V, I D = 0.5 ? I D25 , Note 1
V GS = 0V, V DS = 25V, f = 1MHz
Resistive Switching Times
4.0
6.5
2230
170
64
22
mS
pF
pF
pF
ns
t r
t d(off)
t f
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
R G = 3 Ω (External)
20
50
38
ns
ns
ns
Terminals: 1 - Gate
3 - Source
2,4 - Drain
Q g(on)
67
nC
Q gs
Q gd
R thJC
R thCS
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
TO-247
12
36
0.21
nC
nC
0.23 ° C/W
° C/W
Source-Drain Diode
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
I S
V GS = 0V
6
A
I SM
V SD
Repetitive, Pulse Width Limited by T JM
I F = 6A, V GS = 0V, Note 1
24
1.3
A
V
TO-247 Outline
t rr
I RM
Q RM
I F = 3A, -di/dt = 100A/ μ s
V R = 100V, V GS = 0V
1.5
12
9
μ s
A
μ C
1
2
3
?P
e
Note:
1. Pulse test, t ≤ 300 μ s, duty cycle, d ≤ 2%.
Terminals: 1 - Gate
3 - Source
Dim.
Millimeter
Min. Max.
A 4.7 5.3
2.2 2.54
A 1
A 2
2.2 2.6
b 1.0 1.4
b 1
1.65 2.13
b 2
2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
? P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
2 - Drain
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,860,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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